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The structural quality of AlxGa1−xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy
2009
Al(x)Ga(1-x)N layers of varying composition (0.5metalorganic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (x(Al)<0.75), a compositional inhomogeniety associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.
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