Old Web
English
Sign In
Acemap
>
Paper
>
Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN
Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN
2019
Takashi Nakano
Kenta Chokawa
Yosuke Harashima
M. Araidai
K Shiraishi
A. Oshiyama
A Kusaba
Yoshihiro Kangawa
Atsushi Tanaka
Y. Honda
H. Amano
Keywords:
Condensed matter physics
Materials science
Dislocation
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]