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M. Araidai
M. Araidai
Applied Science Private University
Electronic engineering
Superlattice
Phase-change memory
Materials science
First principle
4
Papers
32
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Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN
2019
Takashi Nakano
Kenta Chokawa
Yosuke Harashima
M. Araidai
K Shiraishi
A. Oshiyama
A Kusaba
Yoshihiro Kangawa
Atsushi Tanaka
Y. Honda
H. Amano
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First-Principles Study on Formation of Freestanding Silicene and Germanene
2019
The Japan Society of Applied Physics
M. Araidai
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Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications
2013
VLSIT | Symposium on VLSI Technology
Norikatsu Takaura
Takasumi Ohyanagi
M. Kitamura
M. Tai
M. Kinoshita
K. Akita
T. Morikawa
S. Kato
M. Araidai
Katsumasa Kamiya
T. Yamamoto
Kenji Shiraishi
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Charge-injection phase change memory with high-quality GeTe/Sb 2 Te 3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations
2013
IEDM | International Electron Devices Meeting
Takasumi Ohyanagi
Norikatsu Takaura
M. Tai
M. Kitamura
M. Kinoshita
K. Akita
T. Morikawa
S. Kato
M. Araidai
Katsumasa Kamiya
T. Yamamoto
Kenji Shiraishi
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Citations (19)
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