Effect of Ta doping on the properties of β-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates

β-Ga2O3 single-crystal films with Ta doping concentrations of 0–1.4 at.% were prepared on KTaO3(100) substrates by metal–organic chemical vapor deposition. Herein, we investigated the influence of Ta doping concentration on the structural and electrical properties of the films. X-ray diffraction results showed that the crystalline quality of the films slightly deteriorated with the increase of doping concentration, and the epitaxial relationship was identified as β-Ga2O3(100)//KTaO3(100) with β-Ga2O3[001]//KTaO3   . The chemical composition and surface morphology of the films were characterized using X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. Hall effect measurement determined that the resistivity and carrier concentration of the films were in the range of 14.8 ~ 5.01 × 103 Ω cm and 3.85 × 1016 ~ 3.97 × 1018 cm−3, respectively, whereas the film with 0.2 at.% Ta doping concentration presented the highest Hall mobility of 4.56 cm2 V−1 s−1.