Preparation and Characterization of Ru Film for Non-magnetic Intermediate Layer

Ru films were prepared by RF-megnetron sputtering method on different crystal planes of monocrystal Si.The structure and morphology of films were investigated by means of XRD,SEM and AFM.The results indicated that Ru films deposited on Si(100),Si(110) and Si(111) chips were preferentially grown with(002) crystal face.All surfaces of Ru/Si films were composed of small round grains.The surface of Ru-Si(111) film had the most small grains and the biggest roughness in the three samples,which is benefit to improve the magnetic performance of magnetic recording layer.