Single-electron transistors fabricated from a highly doped SOI film : Special Issue on Nanotechnology

We propose Doped-Thin-Si-Film Single-Electron-Transistors (DS-SETs) which are fabricated from a highly-doped SOI (Silicon-on-Insulator) film by using a calixarene negative resist. The structure can be well controlled, so a DS-SET with a 45-nm-diameter island showed nearly ideal SET characteristics with a charging energy of 1.4 meV. Our results demonstrate that single electron tunneling occurs through a single island without any isolated islands formed due to potential fluctuations. We also discuss the discreteness of energy levels in a Si island.