Effect of nitrogen content on microstructure and corrosion resistance of sputter-deposited multicomponent (TiNbZrTa)Nx films

Abstract Multicomponent (TiNbZrTa)Nx films were deposited on Si(100) substrates at room temperature using magnetron sputtering with a nitrogen flow ratio fN [fN = N2/(Ar + N2)], which was varied from 0 to 30.8%. The nitrogen content in the films varied between 0 and 45.2 at.%, i.e., x = 0 to 0.83. The microstructure was characterized by X-ray diffraction and electron microscopy. The metallic TiNbZrTa film comprised a dominant bcc solid-solution phase, whereas a single NaCl-type face-centred cubic structure was observed in all nitrogen-containing films (TiNbZrTa)Nx. The mechanical, electrical, and electrochemical properties of these films varied with nitrogen content. The maximum hardness was achieved at 22.1 ± 0.3 GPa when N = 43.0 at.%. The resistivities increased from 95 to 424 μΩcm with increasing nitrogen content. A detailed study of the variation of morphology and chemical bonding with nitrogen content was performed and the corrosion resistance of the TiNbZrTa nitride films was explored in 0.1 M H2SO4. While all the films had excellent corrosion resistances at potentials up to 2.0 V vs. Ag/AgCl, the metallic film and the films with low nitrogen contents (x