Noise performance of 90 nm CMOS technology
2004
This work describes the noise figure performance of CMOS transistors at the 90 nm technology node. Noise parameters are measured from 2-18 GHz, resulting in a minimum noise figure less than 2 dB across the range of measured frequencies for both NMOS and PMOS. Data is presented showing the effect of total gate width, gate length, and bias on the noise parameters.
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