Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process

Abstract One of the promising technologies under development for next generation non-volatile memory is the Conductive Bridging Random Access Memory (CBRAM) which utilizes the reversible switching of an electro-resistive dielectric between two conductive states as means of storing logical data [1–7] . In this paper, we describe the successful integration of CBRAM technology into an industry standard logic process. Moreover, we show functional operation of such a fully CMOS integrated CBRAM memory array and highlight its specific fundamental low power characteristics that make it suitable to be used in scaled embedded application as well as discrete devices.