Actively modulated broadband Terahertz Absorbers realized by VO x thin films

THz stealth and shielding devices with low reflection and strong absorption are promising in terahertz (THz) communication and radar. In this study, active THz reflection and absorption properties based on strong correlated electron oxides VO x (x= 1.5, 2) thin films are investigated. By varying the laser fluence, the reflection can be modulated to near 0 and the absorption can be tuned to near 70%. Our work suggest strong correlated electron oxide films could provide a possible approach for the design of tunable THz stealth and shielding devices.