Development of radiation hard N + -on-P silicon microstrip sensors for super LHC

Radiation tolerance up to 1015 1-MeV neq/cm2 is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n+-on-p sensors. We manufactured sample sensors of 1 times 1 cm in 4" and 6" processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ (float zone) and MCZ (magnetic Czochralski) growth are tested. They are different in crystal orientations and with different wafer resistivities. The sensors were irradiated with 70-MeV protons and evaluated on the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.