Demonstration of a 12 nm-half-pitch copper ultralow-k interconnect process
2013
A process to achieve 12 nm half-pitch interconnect structures in ultralow-k interlayer dielectric (ILD) is realized using standard 193 nm lithography. An optimized pattern transfer that minimizes unwanted distortion of ILD features is followed by copper fill. Electrical measurements that validate functionality of the drawn structures are presented.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
4
References
14
Citations
NaN
KQI