Effect of barrier materials on the polarization field in the active region of blue InGaN LED using Sentaurus

This paper addresses the barrier material of the structural design of a blue InGaN light emitting diode (LED) in order to analyze the polarization effect occurred in the active region by carrying out a simulation using Sentaurus Synopsys. It was observed that the traditional GaN barrier had the highest polarization field due to high lattice mismatch between the wells and barriers. When InGaN or AlInGaN were employed as barrier, the band diagram showed a lower polarization effect. This was attributed to the overlapping of electrons and holes wave functions.