ИССЛЕДОВАНИЕ ХАРАКТЕРИСТИК AlInGaP СВЕТОДИОДОВ КРАСНОГО ЦВЕТА СВЕЧЕНИЯ , ОБЛУЧЕННЫХ НЕЙТРОНАМИ И ГАММА КВАНТАМИ

Moscow State University of Instrument Engineering and Computer Science Are investigated light-emitting diodes on the basis of AlGaInP of heterostructures of red color of a luminescence. Are constructed current-voltage and lumen-voltage characteristics before and after irradiation by neutrons and gamma rays. According to the characteristics defined radiation resistance of LEDs. The source of neutrons with energies of 2.65 MeV was horizontal channel IRT-2000 MGFI with a device enabling them to vary the neutron spectrum. The source of gamma rays with energies of 1.25 MeV using cobalt gun GU-2000. Maximum of the spectral curve of LEDs lying at 630-650 nm. The dependences of the «nonideality factor» ββββ on the voltage, current, neutron fluence and dose of gamma irradiation. Determined that gamma irradiation had no significant effect on the electrical and lighting characteristics to a dose of 10