Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe 2

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer ${\mathrm{WSe}}_{2}$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These ${\mathrm{V}}_{W}$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged ${\mathrm{V}}_{W}$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the ${\mathrm{V}}_{W}$ dopants.