A method for preparing a semiconductor thin film of bismuth sulfide

The present invention discloses a method for preparing a semiconductor thin film of bismuth sulfide, the preparation process is placed after the substrate sequentially glycol methyl ether solution of a bismuth salt and sulfur containing compounds organic solution immersion soaking heat treatment is performed in a protective atmosphere, i.e., the semiconductor thin film of bismuth sulfide is formed on the substrate surface, the method is simple, low cost, reproducible, easy to scale continuous production, the method may control the film thickness of the bismuth sulfide, bismuth sulfide and dense growth of continuous large-area film, vulcanized prepared bismuth semiconductor thin film thickness uniformity, good crystallinity, continuous and compact, and has good optical properties.