Generation of Multiple Energy Bandgaps Using a Gray Mask Process and Quantum Well Intermixing

We report a technique for generation of multiple energy bandgaps using a combination of one-step gray mask lithography and low-energy arsenic ion implantation induced disordering. Using this technique, we have successfully integrated 12-section with variable energy bandgaps on a single InGaAs/InGaAsP laser heterostructure. When compared to conventional processes, this novel technique is simple, promising and cost effective.