Superstoichiometric h-BN films synthesized by ion-beam assisted deposition; N-concentration and respective ion energy dissipation

Abstract Experimental data on the nitrogen content in films grown by ion-assisted deposition are compared to the specific energy (per film atom) dissipated by the ions in displacement damage. As shown there exists a proportionality between the overstoichiometric N content and the energy dissipated in a superficial layer of the growing film.