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Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
2020
Roberta Nipoti
Antonella Parisini
Virginia Boldrini
Salvatore Vantaggio
M. Gorni
Mariaconcetta Canino
Giulio Pizzochero
Massimo Camarda
Judith Woerle
Ulrike Grossner
Keywords:
post implantation
Annealing (metallurgy)
Ion
Composite material
Metallurgy
Materials science
Correction
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