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M. Gorni
M. Gorni
University of Parma
Annealing (metallurgy)
Inorganic chemistry
Chemistry
post implantation
Metallurgy
5
Papers
25
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Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
2020
Materials Science Forum
Roberta Nipoti
Antonella Parisini
Virginia Boldrini
Salvatore Vantaggio
M. Gorni
Mariaconcetta Canino
Giulio Pizzochero
Massimo Camarda
Judith Woerle
Ulrike Grossner
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1950°C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time
2016
ECS Journal of Solid State Science and Technology
P. Fedeli
M. Gorni
A. Carnera
Antonella Parisini
Giovanni Alfieri
Ulrike Grossner
Roberta Nipoti
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Citations (8)
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
2015
Journal of Applied Physics
A. Parisini
M. Gorni
Anindya Nath
Luca Belsito
Mulpuri V. Rao
Roberta Nipoti
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Citations (16)
Electrical characterization of a buried GaSb p‐n junction controlled by native defects
2014
Crystal Research and Technology
M. Gorni
Antonella Parisini
Enos Gombia
M. Baldini
Salvatore Vantaggio
C. Ghezzi
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Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures
2013
Journal of Applied Physics
M. Baldini
E. Gombia
A. Parisini
C. Ghezzi
M. Gorni
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