Overview of Recent Developments in RT-CVD Technology for ULSI Material Processing and Device Fabrication

ABSTRACT Rapid thermal chemical vapor deposition (RT-CVD) technology is strategicallyimportant for deep submicron ULSI manufacturing because of trends towards reducedthermal budget and tightened process control requirements on large diameter Si wafers, and has thus received considerable attention. In this paper, we will review the significant benefits provided by a novel in-situ multi-processing RT-CVD for IC manufacturing andthe considerable progress made in developing RT-CVD as a integrated processing modulecapable of meeting the stringent requirements of ULSI device fabrication. I. INTRODUCTION Rapid thermal processing (RTP) tools are strategically important for future IC manufacturing because of trends towards reduced thermal budget and tightened processcontrol requirements on large diameter Si wafers. The desirable attributes of a RiP tool arerapid lamp heating, cold wall, the capability of rapidly changing the wafer temperature and processing ambient for multiple in-situ processing, and single wafer processing. The