High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800 µm) based on epitaxially integrated triple heterostructures

Today, widening the aperture is considered as one of approaches in development of high-power pulsed semiconductor lasers [1] , [2] . Aperture widening increases the linearity of the light-current characteristic in the region of high currents by reducing the current density, which is important for high-power pulsed laser sources. In addition, in contrast to typical designs of laser diode arrays with a width of the aperture of 100-200 µm, the aperture widening increases the fill factor. Here we study the approach based on the use of epitaxially integrated laser heterostructures and an ultra-wide apertures for high-power pulsed laser sources.