Organic complementary inverters with polyimide films as the surface modification of dielectrics

Abstract The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p -type pentacene-based transistors and n -type N , N ′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI–C 8 H 17 )-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.