High operating temperature InAlSb infrared detectors

The recent progresses of our research in In x Al 1-x Sb infrared detector based on molecular beam epitaxy are presented. Al composition with 0-0.3 is used for adjusting energy gaps of InSb and a p-i-n structure is utilized to decrease dark current. In x Al 1-x Sb ternary alloys are grown by molecular beam epitaxy on InSb substrates, and the material quality is characterized using high resolution x-ray diffraction. In order to exploit this epitaxial material we have developed new mesa and passivation technology based on matured InSb fabrication process. The InAlSb diodes has a cut-off wavelength of around 4.8μm. The reverse bias dark current of InAlSb diodes have been measured. The dark current of the pin InAlSb diode is seen to smaller that of the bulk p + n InSb diodes by 4-5 times in 77K.