15.2: Green Laser Sequential Lateral Solidification G-SLS Process for AMOLED Applications

This paper presents a novel green laser sequential lateral solidification G-SLS process for AMOLED applications. G-SLS utilizes a high frequency pulsed green laser and 2D mask patterns to manipulate the microstructure of crystallize Si films. Mask patterns have been optimized to obtain uniform microstructure of the crystallized Si films at the overlap region. Thin film transistors based on G-SLS processed Si films have mobility of 150.72 cm2/V-sec and a sub-threshold swing of 0.20V/dec. 14″ qFHD AMOLEDs have been fabricated using the G-SLS process. The advantages and issues of G-SLS technology will be further discussed.