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Effects of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HFETs
Effects of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HFETs
2013
M.K. Eo
H S Choi
Seung Yup Jang
Woong-Sun Kim
Jong Hoon Shin
Taehoon Jang
H.-I. Kwon
Keywords:
Optoelectronics
Nanotechnology
Materials science
normally off
algan gan
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