Thermoelectric properties of In1.3−xSnxSe prepared by spark plasma sintering method

Abstract Polycrystalline In 1.3− x Sn x Se samples are prepared by melting and spark plasma sintering methods. The substitution of Sn causes the decrease of the band gap and the increase of carrier concentration, thus the improvement of power factor. The lattice thermal conductivity is effectively decreased with increasing the Sn content. For the sample of x  = 0.05, the ZT value of 0.66 is achieved at 700 K, 57% higher than that of the unsubstituted sample, showing potential applications in the intermediate temperature range.