Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures
2016
Defect-free mismatched heterostructures on Si substrates are
produced by an innovative strategy. The strain relaxation is
engineered to occur elastically rather than plastically by
combining suitable substrate patterning and vertical crystal
growth with compositional grading.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
23
References
28
Citations
NaN
KQI