New results on silicon microstrip detectors of CMS tracker

Abstract Interstrip and backplane capacitances on silicon microstrip detectors with p + strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4×10 14 protons / cm 2 of 24 GeV /c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a 〈1 0 0〉 substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p + implant has been studied and found to enhance the stability.