Integrated circuit soldered die connection structure and method therefor

PURPOSE: To obtain a semiconductor device in which failure such as crack due to soldering intruding into a through-hole provided at the semiconductor wafer of a microwave integrated circuit can not be generated. CONSTITUTION: This semiconductor device is provided with a semiconductor wafer 12 having at least one through-hole 34 extended between a first main face and a second main face, on whose first main face an integrated circuit is formed, and on whose second main face a ground face metallic layer 36 is formed, a first layer 38 of metal such as nickel in which leakage for soldering formed in this through-hole and on the ground face metallic layer is not generated, and a second layer 42 of metal such as gold in which leakage for soldering formed on the first metal except the through-hole is generated for connecting this semiconductor wafer with a substrate.