New degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress

Avalanche hot carrier induced bipolar device degradation as a function of temperature, current density, and time is reported. The observed drift in emitter‐base breakdown voltage (Vebo) is found to be well correlated to changes in forward base (Ib) and collector (Ic) currents. The model of hydrogen release from the Si‐SiO2 interface and its subsequent passivation of base dopants during hot carrier stress is proposed to account for such a correlation.