Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization
2011
Low frequency noise (LFN) characterization was performed on the HfSiON gate stacks fabricated with the SiON interfacial layers (ILs) and a La cap layer. The LFN data identified N and La related defects located in the IL/HK region.
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