Experimental study of the defect accumulation in the microwave bipolar transistors under the action of an electric-pulse train

It is demonstrated that a number of relatively thin electric pulses that cause the catastrophic failure of a transistor due to the accumulation of defects exponentially increases with decreasing pulse energy when the pulse energy is less than the burnout energy by a factor of no less than two. A stronger alternative destruction effect is implemented if the energy is comparable with the burnout energy.