High performance and highly reliable deep submicron CMOSFETs using nitrided-oxide
1999
High performance and highly reliable CMOSFETs have been obtained using newly-developed nitrided-oxide processing, which features the localization of the nitrogen profile at the SiO/sub 2/-Si interface, and giving different nitrogen concentrations between the gate and LDD area. In p-MOSFETs, I/sub on/ can be increased by 12%, and I/sub off/ can be decreased by 50% compared with pure oxide. Also, in n-MOSFETs, hot carrier reliability significantly improves.
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