On the organic field-effect transistors with laminated structure prepared by vacuum coating

A new laminated structure was applied to the organic field-effect transistors (OFETs), which is different from the conventional top-contact and bottom-contact structures. With the vacuum film deposition process, SiO2 was taken as the insulation layer and CuPc as the channel layer. The measured output characteristic curves showed that the device exhibits unambiguous characteristics of field-effect. Investigation on the temperature characteristics showed that the drain current increases with the temperature. XRD analysi s indicated that CuPc thin films deposited on both Si/SiO2 and Si/SiO2/Al substrates by vacuum evaporation coating are of polycrystalline structure, and the average grain size of the CuPc films deposited on the two different substrates is the same on the whole