Surface morphology and photoluminescence of InAs quantum dots grown on [11~0]-oriented streaked islands under ultra-low V/III ratio
2004
The influences of the low V/III ratio on the surface morphologies and temperature-dependent photoluminescence spectrum of InAs-GaAs quantum dots (QDs) prepared by organometallic vapor phase epitaxy are investigated. Due to the accumulation of In adatoms at the multiatomic step edge on [001] 2/sup 0/ off toward an [111] n-type GaAs substrate, InAs island growth with /spl sim/1 ML coverage takes place prior to the InAs QD formation. With increasing InAs coverage, self-assembled InAs QDs are observed near the InAs islands, which is attributed to the recapture of desorbed In atoms nucleating with supplied As atoms on the edge along [11~0]-orientation of the GaAs substrate.
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