High-Power InGaAs/InP Partially Depleted Absorber Photodiodes for Microwave Generation

A 2-D fully coupled electrothermal physical model of a p-i-n photodiode, which takes into account external electric circuit, has been developed. Based on numerical simulation, we present the data on the maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/InP partially depleted absorber photodiodes in the frequency range from 10 to 60 GHz.