Bright on-chip mid-IR supercontinuum generation to 7.7μm in silicon germanium-on-silicon platform

We report mid-IR supercontinuum generation, from 2.9 to 7.7μm, in a CMOS compatible silicon-germanium waveguide. This 1.3 octave bright supercontinuum has been achieved in a low loss dispersion engineered air-clad Si0.6Ge0.4/Si waveguide.