A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test

A method is presented that enables rapid determination of failure rate and lifetime distribution for semiconductor devices based on the studv of process-stress accelerated life test.Process.stress accelerated test is applied to determine the faillife rate in the method，and the lifetime distribution and failure rate can be determined based on evaluation of the lifetime.To demonstrate the application of the method，it has been applied to a kind of matte products，3DGl30+A process-stress accelerated test was constructed in the ternperature range of 160～3l0℃.Then the related reliable parameters，such as lifetime and failure rate were figured out utilizing the model.Experimental results are in agreement with that in the literature，proving that the method is effective.