Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2

Abstract Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH 4 /CH 4 /H 2 and the influence of H 2 gas flow rate ( F (H 2 )) on the film properties was investigated. The SiH 4 gas flow rate was 1 sccm. At the CH 4 gas flow rate ( F (CH 4 )) of 1 sccm, nanocrystalline cubic SiC (nc-3C-SiC) grew even without H 2 . On the other hand, at F (CH 4 ) = 2 sccm, amorphous SiC grew without H 2 and nc-3C-SiC grew above F (H 2 ) = 50 sccm. As F (H 2 ) was increased, the crystallinity improved both at F (CH 4 ) = 1 and 2 sccm. However, the mean crystallite size decreased at F (CH 4 ) = 1 sccm and increased at F (CH 4 ) = 2 sccm. We discuss growth mechanisms of nc-3C-SiC.