High Sensitive 2.4 GHz Band Rectenna with Direct Matching Topology

In this paper, the high sensitive 2.4 GHz band rectenna with direct matching topology is described. The rectenna is consisting of the inductive planar 3-strip folded dipole antenna with 10 $\mathrm{k}\Omega$ impedance and the SOI-CMOS rectifier IC. The rectifier IC is fabricated on Global Foundries 40 nm SOI-CMOS for improvement of the rectification efficiency in $\mu \mathrm{W}$ region. Furthermore, the inductive planar 3-strip folded dipole antenna is proposed to be combined with the rectifier IC with capacitive admittance for direct impedance matching. The developed rectenna achieves the rectification efficiency of 14.7 % at the input power of -30 dBm.