X-band 50W silicon double drift pulsed region IMPATT diode

H. Nagao,H. Hasumi,N. Fujine

X-band 50W silicon double drift pulsed region IMPATT diode

1979

H. Nagao
H. Hasumi
N. Fujine

An X-band pulsed IMPATT diode for radar system use will be covered. The diode delivers 50W peak power at 10GHz with 13% efficiency with 1μs pulsewidth and 10% duty factor.

Keywords:

Electrical engineering
Electronic engineering
IMPATT diode
Duty cycle
Computer science
Diode
X band
Radar
Optoelectronics
Backward diode
Silicon
radar systems

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