Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions

A1. Carbon incorporation A3. Chemical beam epitaxy B1. AlGaAs B3. Solar cells B3. Tunnel junction abstract Trimethyl aluminium (TMA) was used as an intrinsic dopant source to grow highly p-doped AlGaAs by chemical beam epitaxy (CBE). Growth parameters were varied to control doping level, and three sets of growth parameters were identified to maximize the hole concentration in CBE-grown AlGaAs: low temperature growth; low V/III ratio combined with high growth rate; aluminium-rich composition. AlGaAs/GaAs tunnel junctions were fabricated using each of these set of growth parameters and tunneling peak currents as high as 6136 A/cm 2 were obtained. These tunnel junctions are suitable for use