Current limiting semiconductor device

Semiconductor arrangement for current limiting comprising a first passive Limiterelement as well as with (2; 20; 24, 25) of silicon carbide having a first and a second Limiteranschluss (16, 17) on a main surface (5) of the Limiterelements (24, 25 2; 20;) a first semiconductor region (4) of a first conductivity type, a) the first passive Limiterelement (2; 20; 24, 25) disposed between the first and second Limiteranschluss (16, 17) double structure with two series-arranged lateral (parallel to the main surface 5) oriented current flow channels (6, 7 ) which b) (to the first Limiteranschluss 16) (as part of the first semiconductor region 4) comprises connected first current flow channel (6) formed first channel region (8), b1) the (near-surface between a first semiconductor region 10) and an at least partially (within the first semiconductor region 4) buried first island region (12), wherein b2) the first near-surface semiconductor region (10) and the first island region (12) of a second opposite conductivity type to the first conductivity type opposite ...