Determination of refractive indexes of In0.52Al0.48As on InP in the wavelength range from 250 to 1900 nm by spectroscopic ellipsometry

Abstract In a previous paper, we found that between InP and In 0.52 Al 0.48 As grown by molecular beam epitaxy, an interface layer exists, owing to the interaction of arsenic with InP in the preheat phase of the MBE growth. To determine the refractive index and thicknesses of the In 0.52 Al 0.48 As and the interface layer in the wavelength range from 300 to 1900 nm, layers 10, 20, 200 and 2000 nm thick of MBE-grown In 0.52 Al 0.48 As on InP were investigated using spectroscopic ellipsometry.