Studying on Thickness Control of ITO Films Deposited Using RF Magnetron Sputtering

Indium tin oxide (ITO) films are widely applied as the transparent electrode in the photoelectric device because of its high conductivity and high transmittance in the visible wavelength. But the resistivity and position of transmittance peak of ITO films were influenced by the thickness of ITO films, so it is important significant to study the deposition rate of ITO films deposited using RF magnetron sputtering. In this paper, ITO films were prepared by RF magnetron sputtering method on K9 glass substrate, the influence of RF power, sputtering pressure, oxygen ratio, and substrate temperature on the deposition rate of ITO films was mainly studied, meanwhile, the influence of annealing temperature on the film thickness and the process stability depositing ITO using RF magnetron sputtering was studied, and the influence mechanism of technique parameters was analyzed.