Electroless deposition of bismuth on Si(111) wafer from hydrogen fluoride solutions
2010
Abstract Thin Bi layers were deposited by simple immersion of silicon chip into diluted HF aqueous solution, containing bismuth(III) ions. Bi nanoparticles or continuous up to 300 nm thick Bi film can be grown on silicon by the variation of the temperature and deposition time. Prepared surfaces have been characterized by atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman scattering, photoluminescence and resistivity measurement methods. It was found that thinner Bi layers have a yellowish colour.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
20
References
9
Citations
NaN
KQI