Self-organization of nanoscale structures at various types of substrates

The regularities of formation of nanoclusters of germanium (Ge) and SiGe solid solution on the silicon substrates oriented in the plane (100), (111), and also on the surface of nanofilms of SiO 2 , Si 3 N 4 and Dy 2 O 3 are investigated. It is established that the spatial characteristics of self-organizing nanoclusters are defined by the temperature of deposition, crystallographic orientation of a semiconductor substrate, type of a dielectric film on the substrate, the effective thickness of the film of polycrystalline silicon and by the content of germanium in it.