Dry etching for high-resolution maskmaking

New development on both positive and negative tone resist allows maskmaking technology to achieve sub half micron fea tures through dry etching process. This paper will demonstrate lOOnm to 200nm lines and spaces maskmaking capability using standard chromium photomask coa ted with single layer resist SAL6O1 from Shipley for negative tone image and PLASI4ASK from UCB Electronics using the PRIME process for positive tone image. Moreover using PRIME a full dry process from resist deve lopment to chromium etching is proposed. An optimized process point for chromium etching using both SAL6O1 and PLASMASK resists obtained by statiscal experimen tal design is proposed. I .