Advanced Applications of Semiconductor Epitaxy for Cutting Edge Integrated Circuit Technolgy
2006
Silicon and silicon germanium epitaxy is playing a pivotal role in current CMOS technology. The application of semiconductor epitaxy in the past was mainly confined to hetero junction bipolar technology (HBT) to control boron doping profile in the base region, and to provide p Si layer for CMOS. However, as CMOS scaling is becoming increasingly difficult, exploitation of strain-Si in the channel region to boost CMOS performance has given epitaxy a new place in IC fabrication. Selective SiGe epitaxial growth in the source-drain and extension regions of a pFET is already in production for 90 and 65 nm CMOS to provide strained Si channel. Ultimate CMOS of the future is envisioned to have non-Si channels including Ge and III-V compounds. Epitaxy, whether CVD based (RPCVD, UHCVD) or MBE, will play a central role for semiconductor material development. In this review we will describe relatively new applications of epitaxy for advanced hybrid oriented technology (HOT) viz SuperHOT, and a single wafers sSOI process by SIMOX.
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